Semiconductor device and method of manufacturing the same

ABSTRACT

A semiconductor device includes a first case part, a second case part coupled to the first case part to provide a case, a semiconductor module disposed within the case closer to the second case part than to the first case part, and a plate interposed between the first case part and the semiconductor module. The plate is a thermal conductor, that is a material having thermal conductivity, to transfer heat generated by the semiconductor module to the case where the heat can dissipate to the outside of the semiconductor device.

PRIORITY STATEMENT

This is a Continuation of U.S. application Ser. No. 16/534,057, filedAug. 7, 2019, now U.S. Pat. No. 11,056,416 issued on Jul. 6, 2021, and aclaim of priority under 35 U.S.C. § 119 is made to Korean PatentApplication No. 10-2018-0105844, filed on Sep. 5, 2018, in the KoreanIntellectual Property Office, the disclosures of which are herebyincorporated by reference in their entireties.

BACKGROUND

The inventive concepts relate to a semiconductor device and, moreparticularly, to an SSD memory device.

A solid state drive (or solid state disk; SSD) stores data using amemory device such as a flash memory and may thus serve as a substitutefor a typical hard disk drive (HDD). The term “solid state” refers tothe fact that an SSD does not have mechanically moving parts, ascompared to a typical HDD. Thus, an SSD may operate with less seek time,latency, and mechanical driving time than an HDD and thus may operate ata relatively high speed. In addition, the SSD is not prone to errorscaused by mechanical friction and thus may have better reliability thanan HDD.

Typically, an SSD includes a package in which memory chips are mountedon a printed circuit board (PCB), and such an SSD package may beprovided in a closed case or an opened case.

SUMMARY

According to an aspect of the inventive concept, there is provided asemiconductor device including a first case part, a second case partcoupled to the first case part and collectively providing a case, asemiconductor module disposed within the case and situated closer to thesecond case part than to the first case part, and a thermal conductorcomprising a plate disposed within the case and interposed between thefirst case part and the semiconductor module. The plate transfers heatgenerated by the semiconductor module to the first case part.

According to another aspect of the inventive concept, there is provideda semiconductor device including a case, a semiconductor module disposedwithin the case, a thermal conductor comprising a plate disposed withinthe case, and thermal interface material interposed between andthermally coupling the semiconductor module and the plate of the thermalconductor. The case includes a bottom part and a top part coupled to thebottom part, the bottom part including a bottom wall of the case and thetop part including a top wall of the case spaced from and disposedopposite the bottom wall. The semiconductor module has a packagesubstrate situated closer to the top wall of the case than to the bottomwall of the case, and electronic components mounted and electricallyconnected to the package substrate. At least one of the electroniccomponents comprises a semiconductor chip. The thermal conductor isinterposed between the bottom wall of the case and the semiconductormodule whereby one side of the plate faces the semiconductor module andanother side of the plate faces the bottom wall of the case. The thermalconductor is thermally conductively coupled to the bottom part of thecase in a region between the plate and the bottom wall of the case.Thus, heat generated by the semiconductor module is transferred to theplate by the thermal interface material and then to the case by thethermal conductor so as to dissipate to the outside of the case.

According to another aspect of the inventive concept, there is provideda semiconductor device including a case, a semiconductor module disposedwithin the case, a thermally conductive plate disposed within the case,and thermal interface material thermally coupling the semiconductormodule and the thermally conductive plate. The case includes a bottompart and a top part coupled to the bottom part, the bottom partincluding a bottom wall of the case and the top part including a topwall of the case spaced from and disposed opposite the bottom wall. Thesemiconductor module has a package substrate and electronic componentsmounted and electrically connected to the package substrate. A least oneof the electronic components comprises a semiconductor chip. Thethermally conductive plate has a top surface facing the semiconductormodule and a bottom surface facing the bottom wall of the case. Thethermal interface material is disposed on only a portion of the topsurface of the thermally conductive plate at a region verticallyjuxtaposed with at least one of the electronic components of thesemiconductor module. Heat generated by the semiconductor module istransferred to the thermally conductive plate by the thermal interfacematerial and then to the case so as to dissipate to the outside of thecase.

According to another aspect of the inventive concept, there is provideda method of manufacturing a semiconductor device, including providing asemiconductor module, providing a plate, which overlaps with thesemiconductor module and includes a material having thermalconductivity, on the semiconductor module, providing first and secondcase parts which are coupled to each other to form an inner space inwhich the semiconductor module and the plate are disposed, and couplingthe first case part, the semiconductor module, the plate, and the secondcase part to manufacture a semiconductor device. The plate may conductheat generated from the semiconductor module to dissipate the heat to anoutside of the semiconductor device.

BRIEF DESCRIPTION OF THE DRAWINGS

The inventive concepts will become more apparent in view of the attacheddrawings and accompanying detailed description.

FIG. 1A is a perspective view of an example of a semiconductor deviceaccording to the inventive concepts.

FIG. 1B is a cross-sectional view taken along a line I-I′ of FIG. 1A.

FIG. 2A is an exploded perspective view from the top of thesemiconductor device of FIG. 1A.

FIG. 2B is an exploded perspective view from the bottom of thesemiconductor device of FIG. 1A.

FIG. 3 is a perspective view of a first case part and a plate coupled toeach other, of the semiconductor device of FIG. 1A.

FIG. 4A is a perspective view of a version of a plate constituting athermal conductor of a semiconductor device according to the inventiveconcepts.

FIG. 4B is a cross-sectional view of the semiconductor device includingthe plate of FIG. 4A.

FIG. 5A is a perspective exploded view of parts of another example of asemiconductor device according to the inventive concepts.

FIG. 5B is a cross-sectional view of the semiconductor device having theparts of FIG. 5A.

FIG. 6A is a perspective view of another version of a plate constitutinga thermal conductor of a semiconductor device according to the inventiveconcepts.

FIG. 6B is an enlarged view of a portion ‘A’ of the plate of FIG. 6A.

FIG. 7A is a perspective view of still another version of a plateconstituting a thermal conductor of a semiconductor device according tothe inventive concepts.

FIG. 7B is an enlarged view of a portion ‘B’ of the plate of FIG. 7A.

FIG. 8A is a perspective view of still another version of a plateconstituting a thermal conductor of a semiconductor device according tothe inventive concepts.

FIG. 8B is a cross-sectional view of the plate taken along a line II-II′of FIG. 8A.

FIG. 9 is an exploded perspective view of a plate and a first case partof a semiconductor device according to the inventive concepts.

FIG. 10 is a perspective view of another version of a thermal conductorof a semiconductor device according to the inventive concepts.

FIG. 11 is a perspective view of still another version a plateconstituting a thermal conductor of a semiconductor device according tothe inventive concepts.

DETAILED DESCRIPTION

Examples of semiconductor devices, and in particular, SSDs, according tothe present inventive concepts will now be described in detail withreference to the drawings. In the drawings, the sizes and/or ratios ofsome components or elements may be exaggerated or reduced, or otherwiseillustrated schematically, for clarity. Also, like reference numeralsdesignate like elements throughout the drawings and therefore, anelement or feature designated by a particular reference number anddescribed in detail with reference to an example of the inventiveconcept may not be described again in detail in connection with otherexamples of the inventive concept.

One example of semiconductor device 10 according to the inventiveconcepts will first be described in detail with reference to FIGS. 1A,1B, 2A and 2B and 3 .

The semiconductor device 10 may include a first case part 100, a secondcase part 200, a semiconductor module 300, a plate 400, heat-absorbentmaterial constituting a first heat dissipation member 500, and aconnector 600. The semiconductor device 10 may be a memory device. Forexample, the semiconductor device 10 may be a solid state drive (orsolid state disk; SSD).

The first case part 100 and the second case part 200 may be coupled toeach other to form a case having an inner space 105. Each of the firstand second case parts 100 and 200 may include a bottom surface and foursidewalls vertically protruding from edges of the bottom surface.However, the inventive concepts are not limited thereto. For example,the first case part 100 may be a lower part of the case in the form of atray and the second case part 200 may be an upper part of the case andserve as a cover of the case. Heights of the sidewalls of the first casepart 100 are less than heights of the sidewalls of the second case part200 in the example of FIGS. 1A, 1B, 2A and 2B. However, the inventiveconcepts are not limited thereto.

The first case part 100 may include a first coupling part 102. The firstcoupling part 102 helps couple the first case part 100 to the plate 400,the semiconductor module 300, and the second case part 200. For example,the first coupling part 102 is a boss having a female (internal) threadthat can receive a screw. That is, the first coupling part 102 may be atapped part of the first case part 100. The first case part 100 may be ametal case. For example, the first case part 100 may be formed ofaluminum.

The second case part 200 may include a second coupling part 202. Thesecond coupling part 202 may be provided at a position corresponding tothe first coupling part 102. The second coupling part 202 also helpscouple the second case part 200 to the plate 400, the semiconductormodule 300, and the first case part 100. For example, the secondcoupling part 202 is an untapped boss defining therein a hole that canreceive a screw. Thus, for example, when the first case part 100 and thesecond case part 200 are coupled to each other, the second coupling part202 inserted in or against the first coupling part 102 and a screw SCmay be inserted into the first and second coupling parts 102 and 202,and screwed to the first coupling part 102, to couple the first andsecond case parts 100 and 200 to each other.

That is, the screw and first and second coupling parts 102 and 202 maycollectively constitute a coupling that couples the first and secondcase parts 100 and 200 to each other. As shown in the figures, four suchsets of coupling parts 102 and 202 and screws SC are provided to formthe coupling but the inventive concepts are not limited thereto.Moreover, the coupling parts 102 and 202 may have other configurationswith respect to the manner in which the screw SC is received thereby.Still further, the coupling may take forms other than theabove-described screw coupling.

The second case part 200 may also be a metal case. The second case part200 may be formed of the same material as the first case part 100. Forexample, the second case part 200 may be formed of aluminum.

The semiconductor module 300 is provided between the first case part 100and the second case part 200 of this example. That is, the semiconductormodule 300 is disposed in the inner space 105. The semiconductor module300 may be closer to the second case part 200 than to the first casepart 100. More specifically, the semiconductor module 300 may be closerto the bottom surface of the second case part 200 than to the bottomsurface of the first case part 100. The semiconductor module 300 can beelectrically connected to an external device (not shown) through aconnector C of FIG. 2B, and thus a position of the semiconductor module300 may be determined by the connector C in the semiconductor device 10.

The semiconductor module 300 may be a single memory package. Forexample, the semiconductor module 300 may be an SSD package.

The semiconductor module 300 may include a package substrate 310, afirst semiconductor component 320, and a second semiconductor component330. The package substrate 310 has an insulating body (body of at leastone insulating or dielectric layer) and wiring (conductive pads, traces,vias or the like) integral with the insulating body. For example, thepackage substrate 310 is a printed circuit board (PCB). The packagesubstrate 310 has a first surface 311 and a second surface 312. As shownin FIG. 1B, the first surface 311 of the package substrate 310 faces thebottom surface of the first case part 100 and/or the plate 400, and thesecond surface 312 of the package substrate 310 faces the bottom surfaceof the second case part 200.

The first semiconductor component 320 may includes at least onesemiconductor chip electrically connected to the package substrate 310.The first semiconductor component 320 may have constituents, e.g.,chips, disposed on the first and second surfaces 311 and 312,respectively. Alternatively, the first semiconductor component 320 maybe provided on only one of the first and second surfaces 311 and 312.The first semiconductor component 320 may be a memory device. Forexample, the first semiconductor component 320 may include a memory chipand a logic chip. The first semiconductor component 320 may have aheight H1. As used herein, the height of a semiconductor componentrefers to the maximum distance that the component protrudes verticallyfrom the surface (first surface 311 or second surface 312) of thepackage substrate 310 on which the component is mounted. Constituents,e.g., chips, of the first semiconductor component 320 may have slightlydifferent heights based on their type. However, particulars of anexample in which chips of different heights are mounted to the packagesubstrate 310 will be described later on.

The second semiconductor component 330 includes at least onesemiconductor chip electrically connected to the package substrate 310.The second semiconductor component 330 may be disposed at a side of thepackage substrate 310. The second semiconductor component 330 maycomprise a passive component. For example, the second semiconductorcomponent 330 comprises a capacitor. The second semiconductor component330 may have a height H2. The height H2 of the second semiconductorcomponent 330 may be greater than the height H1 of the firstsemiconductor component 320.

The numbers, sizes and arrangement of the first and second semiconductorcomponents 320 and 330 of the semiconductor device 10 as shown in anddescribed with reference to FIGS. 1B, 2A and 2B are exemplary only. Thatis, the inventive concepts are not limited thereto.

The semiconductor module 300 is spaced apart from the first case part100 by a first distance M1 and is spaced apart from the second case part200 by a second distance M2 less than the first distance M1. In otherwords, the semiconductor module 300 may be closer to the second casepart 200 than to the first case part 100. The plate 400 may be disposedbetween the first case part 100 and the semiconductor module 300. Thesecond case part 200 may be adjacent to the semiconductor module 300.Thus, in this example the plate 400 is not interposed between the secondcase part 200 and the semiconductor module 300; rather, the plate 400 isdisposed in the inner space 105 between the first case part 100 and thesemiconductor module 300. A distance D1 between the plate 400 and thesemiconductor module 300 may be less than a distance D2 between theplate 400 and the first case part 100. The plate 400 has a first surface401 and a second surface 402. Referring to FIG. 1B, the first surface401 of the plate 400 faces the bottom surface of the first case part100, and the second surface 402 of the plate 400 faces the semiconductormodule 300.

The first surface 401 and the second surface 402 of the plate 400 may beflat. Referring to FIGS. 2A and 2B, the plate 400 may have a hole(s) 404extending therethrough between the first surface 401 and the secondsurface 402. The hole 404 may be formed at a position corresponding tothe connector 600 on the bottom surface of the first case part 100. Theconnector 600 may be inserted in the hole 404 with an interference fitbetween the connector 600 and the plate 400. That is, a width ordiameter of the connector 600 may be greater than the width or diameterof the hole 404. Thus, the plate 400 may be coupled to the first casepart 100. In the example illustrated in FIGS. 2A and 2B, two holes 404are formed at opposite ends of the plate 400, respectively, incorrespondence with two connectors 600. However, the number, shapeand/or position of the hole(s) 404 and corresponding connectors 600 arenot limited thereto.

The plate 400 is of material that has a high thermal conductivity. Theplate 400 may also be rigid. That is, a semiconductor device accordingto the inventive concept may have a thermal conductor in the form of arigid plate, namely, the plate 400 is of thermally conductive material.To this end, the plate 400 may be a metal plate. The plate 400 mayinclude the same material as the first case part 100 and the second casepart 200. That is, the plate 400 may be but is not limited to beingformed of aluminum. The plate 400 has a top surface facing thesemiconductor module 300 and a bottom surface facing the bottom surfaceof the first case part 100. In the present specification, spatiallyrelative terms such as “top” and “bottom” obviously refer to thepositions of features when the semiconductor device is oriented as shownin the drawings.

When the semiconductor device 10 is operated, the plate 400 assists indissipating or releasing heat emitted from the semiconductor module 300to the outside of the semiconductor device 10. In particular, the plate400 transfers heat generated from the first semiconductor component 320disposed on the first surface 311 of the package substrate 310 to theoutside of the semiconductor device 10. To this end, the plate 400 maybe connected to the first case part 100 through the connector 600.

Referring to FIG. 1B, in this example the plate 400 is verticallyjuxtaposed with at least a portion of the semiconductor module 300. Inthis example, the plate 400 overlaps the semiconductor module 300 atboth of its ends when viewed in a plan view. Accordingly, the degree offreedom of arranging and/or interconnecting the first and secondsemiconductor components 320 and 330 in the semiconductor module 300 isrelatively high.

The first heat dissipation member 500 is interposed between thesemiconductor module 300 and the plate 400. The first heat dissipationmember 500 may be in contact with the semiconductor module 300 and theplate 400. Alternatively, the first heat dissipation member 500 may bein contact with only one of the semiconductor module 300 and the plate400.

Referring to FIGS. 2A, 2B and 3 , the first heat dissipation member 500may be disposed on the second surface 402 of the plate 400 at a positioncorresponding to the position of the first semiconductor component 320disposed on the first surface 311 of the package substrate 310. Theheat-absorbent material constituting the first heat dissipation member500 may be a thermal interface material (TIM). For example, theheat-absorbent material constituting the first heat dissipation member500 may be a piece(s) of thermal tape. The heat generated from thesemiconductor module 300 may be effectively transferred to the plate 400by the first heat dissipation member 500.

As was mentioned above, the connector 600 couples the first case part100 and the plate 400. The connector 600 includes material that isthermally conductive. The connector 600 may be of the same material asthe plate 400. For example, the connector 600 may be formed of aluminum.In the illustrated example, the connector 600 is inserted in the hole404 with an interference fit such that the first case part 100 ispress-fit to the plate 400. Alternatively, the connector 600 and thehole 404 may define a tapped opening that receives a screw such that thefirst case part 100 and the plate 400 are connected by the screw, or theconnector 600 may be received in the hole 404 and welded to a portion ofthe plate 400 defining the hole 404 such that the first case part 100and the plate 400 are connected by a weld. In addition, in theillustrated example the connector 600 is provided on the bottom surfaceof the first case part 100. Alternatively, the connector 600 may beprovided at the plate 400.

As mentioned above, the first heat dissipation member 500 may compriseTIM. However, typical TIM used in applications such as those to whichthe inventive concepts pertain is relatively expensive. According to anaspect of the inventive concepts, the plate 400 allows for a minimalamount of heat transfer material, such as the TIM, to be used. Thus, thesemiconductor device 10 may have excellent heat dissipationcharacteristics and yet can be produced at a low manufacturing cost. Inaddition, the plate 400 may be provided separately from the first andsecond case parts 100 and 200 in the semiconductor device 10, thusmaking the manufacturing the plate 400 and the first case part 100 andthe second case part 200 relatively easy.

A method of manufacturing the semiconductor device 10 described abovemay include providing the semiconductor module 300, providing the plate400 overlapping with the semiconductor module 300 and including amaterial having thermal conductivity on the semiconductor module 300,providing the first and second case parts 100 and 200 coupled to eachother to form the inner space 105 in which the semiconductor module 300and the plate 400 are disposed, and coupling the first case part 100,the semiconductor module 300, the plate 400, and the second case part200. The providing of the plate 400 may include coupling the plate 400to the first case part 100 (see FIG. 3 ). The coupling of the plate 400to the first case part 100 may include coupling the plate 400 to thefirst case part 100 by a screw-hole engagement method, a press-inmethod, and/or a welding method. The coupling of the first case part100, the semiconductor module 300, the plate 400, and the second casepart 200 may be performed by a screw-hole engagement method, a press-inmethod, and/or a welding method. In the present specification, the firstand second case parts 100 and 200 coupled to each other by thescrew-hole engagement method are illustrated as an example for thepurpose of ease and convenience in illustration. However, the inventiveconcepts are not limited thereto.

Another example of a semiconductor device 10 a according to theinventive concepts is shown in FIG. 4A and FIG. 4B.

In this example, the semiconductor device 10 a has a plate 400 aincluding an opening region OA. The opening region OA of the plate 400 amay define a notch in a side of the plate or opening extending throughthe plate 400 a. The opening region OA may be located at one side of theplate 400 a. In the illustrated example, the opening region OAcorresponds to the region of the second semiconductor component 330 ofthe semiconductor module 300. Because the height H2 of the secondsemiconductor component 330 is greater than the height H1 of the firstsemiconductor component 320, a portion of the second semiconductorcomponent 330 may be disposed in the notch or opening defined by theopening region OA. Thus, the plate 400 a may be disposed relativelyclose to the semiconductor module 300.

In FIG. 4B, D3 represents the distance D3 between the semiconductormodule 300 and the plate 400 a and D4 represents the distance D4 betweenthe first case part 100 and the plate 400 a. Because the distance D3 isrelatively small, a correspondingly small amount of the first heatdissipation member 500 may be used, thus offering savings in the cost ofmanufacture.

The shape, size and/or position of the notch in the plate 400 a, i.e.,the form and location of the opening region OA of the plate 400 a, mayvary from that illustrated in FIG. 4A in dependence on the arrangementand/or interconnection of the first and second semiconductor components320 and 330 of the semiconductor module 300. In addition, a hole(s) inthe plate 400 a corresponding to the hole(s) 404 is/are omitted for thepurpose of ease and convenience of illustration. However, the plate 400a may be connected to the first case part 100 by any of the same meansdescribed above in connection with FIGS. 1A-3 .

FIGS. 5A and 5B is illustrating an example of a semiconductor device 10b according to the inventive concept.

The semiconductor device 10 b includes a first case part 100 a having acover part and a rib structure 110. The rib structure 110 may be formedon a bottom surface of the tray of the first case part 100 a. The ribstructure 110 may have sections that radiate from a central portionthereof. However, the inventive concepts are not limited thereto. Athickness of the rib structure 110 may be equal to or greater than thethickness of the tray of the first case part 100 a. In the example shownin FIGS. 5A and 5B, the rib structure 110 projects from the tray of thefirst case part 100 a. However, the inventive concepts are not limitedthereto. Furthermore, the rib structure 110 may be formed of the samematerial as the tray of the first case part 100 a. Even though not shownin the drawings, a connector for connecting the rib structure 110 andthe plate 400 a may be provided.

The semiconductor device 10 b may further include a second heatdissipation member 700. The second heat dissipation member 700 may be apiece of thermal tape. However, the inventive concepts are not limitedthereto. Alternatively, the second heat dissipation member 700 maycomprise TIM.

The second heat dissipation member 700 may be provided between the plate400 a and the first case part 100 a. The second heat dissipation member700 may have the same shape as the plate 400 a. In other words, thesecond heat dissipation member 700 may have a notch 702 corresponding tothe notch defined by the opening region OA of the plate 400 a. Thesecond heat dissipation member 700 may be in contact with both the plate400 a and the first case part 100 a. Alternatively, the second heatdissipation member 700 may be in contact with only one of the plate 400a and the first case part 100 a.

According to this example of the inventive concepts, the semiconductordevice 10 b has excellent structural rigidity owing in part to the ribstructure 110 of the first case part 100 a. In addition, thesemiconductor device 10 b has excellent heat dissipating characteristicsowing to provision of the second heat dissipation member 700.

FIGS. 6A and 6B illustrate a plate 400 b as an example of the plate thatmay be employed in a semiconductor device according to the inventiveconcepts.

Referring to FIGS. 6A and 6B, the plate 400 b has grooves 410. Thegrooves 410 may be defined in at least one surface of the plate 400 b.In other words, at least one surface of the plate 400 b is undulating.In the illustrated example, the grooves 410 are formed in the secondsurface 402 (see FIG. 4B) of the plate 400 b. A contact area between thefirst heat dissipation member 500 and the plate 400 b is increased bythe undulating surface. However, the inventive concepts are not limitedto the use of an undulating surface to increase the contact area betweenthe first heat dissipation member 500 and the plate 400 b. Rather, theplate may employ various other structures, e.g., protrusions, capable ofincreasing the contact area between the first heat dissipation member500 and the plate.

FIGS. 7A and 7B illustrate a plate 400 c as another example of the platethat may be employed in a semiconductor device according to theinventive concepts. Referring to FIGS. 7A and 7B, the plate 400 c mayhave a rounded edge 420 between its flat top and bottom surfaces. Therounded edge 420 may be provided along only part of or along the entireedge of the plate 400 c.

FIGS. 8A and 8B illustrate a plate 400 d as another example of a platethat may be employed in a semiconductor device according to theinventive concepts.

Referring to FIGS. 8A and 8B, the plate 400 d has a first level portion432, a second level portion 434, and a third level portion 436. As usedherein, the term ‘level’ refers to thickness or a height with respect toa reference surface. For example, the term ‘level’ may refer to a heightas measured from a first surface 401 of the plate 400 d.

The first level portion 432 may have a level L1. The second levelportion 434 may have a level L2 different from the level L1. The thirdlevel portion 436 may have a level L3 different from the level L1 andthe level L2. The level L2 may be higher than the level L1, and thelevel L3 may be higher than the level L2. In the drawings, the levelsare exaggerated for clarity. In other words, the plate 400 d has abottom surface and first, second and third upper surfaces that aredisposed at different levels with respect to the bottom surface.

Referring again to FIG. 2B, as was mentioned above, the constituents ofthe first semiconductor component 320 of the package substrate 310 mayhave various sizes and shapes, e.g., the chips that make up the firstsemiconductor component 320 may be of different kinds and have differentfootprints and/or thicknesses. For example, constituents may include alogic chip (e.g., a controller) and a memory chip and the size(footprint and/or thickness) of the logic chip may be greater than thatof the memory chip. Constituents of the first semiconductor component320, e.g., semiconductor chips, of different heights and mounted on thebottom surface of the package substrate 310 (see FIG. 1B, 4B or 5B) mayconfront or be at positions to face the first level portion 432, thesecond level portion 434, the third level portion 436, respectively,such that the constituents are accommodated as close as possible to theplate 400 d.

Thus, the plate 400 d may accommodate various kinds of constituents ofthe first semiconductor component 320 mounted on the package substrate310. For example, the first level portion 432 may be located across fromthe controller, and the second level portion 434 and the third levelportion 436 may be located across from a memory chip. In this case, thevolume of first heat dissipation member 500 between the semiconductormodule 300 and the plate 400 d may be minimized, and thus the cost ofmanufacture of the semiconductor device may be correspondingly reduced.

FIG. 9 illustrates a plate 400 e and a first case part 100 b of anotherexample of a semiconductor device according to the inventive concepts.

Referring to FIG. 9 , the plate 400 e has a form similar to the plate400 d shown in and described with reference to FIGS. 8A and 8B andfurther includes a connector(s) 600 a. In this example, the connector600 a is provided on the first surface 401 (see FIG. 8B) of the plate400 e.

The first case part 100 b has a rib structure 110 a having a recessregion RA defining a recess. The recess defined by the recess region RAof the rib structure 110 a may expose a bottom surface of the tray ofthe first case part 100 b. The recess defined by the recess region RAmay have a shape corresponding to that of the notch defined by theopening region OA of the plate 400 e and may be provided at a positioncorresponding to the opening region OA. The rib structure 110 a mayinclude a hole(s) 112. The connector 600 a may be inserted in the hole112 of the first case part 100 b (with an interference fit between theconnector 600 a and the portion of the first case part 100 b definingthe hole 112, for example) to couple (by means of a press-fit, forexample) the plate 400 e and the first case part 100 b to each other.

FIG. 10 illustrates a plate 400 f as another example of the plate thatmay be employed by a semiconductor device according to the inventiveconcepts.

Referring to FIG. 10 , the plate 400 f has a fin structure 440comprising fins protruding from at least one surface of the plate 400 f.The fins of the fin structure 440 may extend upright on the firstsurface 401 of the plate 400 f. The fin structure 440 may provide a heatsink. The fin structure 440 (e.g., the heat sink) may absorb heatgenerated by the semiconductor module 300, and thus a semiconductordevice comprising the plate 400 f may exhibit excellent heat dissipationcharacteristics.

FIG. 11 illustrates a plate 400 g as another example of the plate thatmay be employed by a semiconductor device according to the inventiveconcepts.

Referring to FIG. 11 , the plate 400 g has a first region 450 and asecond region 452. The first region 450 may be flat. The second region452 may have a surface roughness different from that of the first region450. For example, the second region 452 may include grooves 454.However, the inventive concepts are not limited thereto. That is, thesecond region 452 may have other forms that provide a surface roughnessdifferent from that of the first region 450.

In this example, the contact area of the second region 452 is greaterthan that of the first region 450. Thus, a semiconductor deviceincluding the plate 400 g may have excellent local heat dissipationcharacteristics. For example, the second region 452 may be situated at aposition corresponding to the first semiconductor component 320 toeffectively transfer heat generated locally by the first semiconductorcomponent 320 and absorbed by the first heat dissipation member 500 (seeFIG. 3 ).

In the examples described above, the first heat dissipation member 500and/or the second heat dissipation member 700 is/are provided betweenthe semiconductor module 300 and only the first case part 100, 100 a or100 b. However, the inventive concepts are not limited thereto. Incertain other examples, a heat dissipation member is also providedbetween the semiconductor module 300 and the second case part 200.

In addition, the rib structure was described as being present inside thefirst case part 100 a or 100 b. However, in certain examples, a ribstructure may be provided inside the second case part 200.

Furthermore, the above-described examples include plates 400, 400 a, 400b, 400 c, 400 d, 400 e, 400 f or 400 g provided only between thesemiconductor module 300 and the first case part 100, 100 a or 100 b.However, in certain other examples, a plate may be provided between thesemiconductor module 300 and the second case part 200. Also, and withthis in mind, the “first case part 100” may arbitrarily refer to thebottom or top part of the case, whereas the “second case part 200” mayarbitrarily refer to the top or bottom part of the case.

Regardless, according to the an aspect of the inventive concepts, asemiconductor device having excellent heat dissipation characteristicsand which can be manufactured at a relatively low cost may be provided.

Finally, examples of the inventive concept have been described above indetail. The inventive concept may, however, be put into practice in manydifferent ways as will be apparent to those of ordinary skill in the artand thus, should not be construed as being limited to the examplesdescribed above. Rather, these examples were described so that thisdisclosure is thorough and complete, and fully conveys the inventiveconcept to those skilled in the art. Thus, the true spirit and scope ofthe inventive concept is not limited by the examples described above butby the following claims.

What is claimed is:
 1. A solid state drive (SSD) comprising: a caseincluding a first portion and a second portion coupled to the firstportion; a semiconductor module disposed within the case; and a thermalconductor disposed within the case, and disposed between thesemiconductor module and the first portion of the case, wherein an innersurface of the first portion of the case is uneven, and the thermalconductor is made of metal.
 2. The SSD of claim 1, wherein the innersurface of the first portion of the case includes a recess.
 3. The SSDof claim 2, wherein the thermal conductor includes a notch defining anopen region, and the inner surface of the first portion of the case iscoupled to the thermal conductor with the recess at a positioncorresponding to a position of the notch.
 4. The SSD of claim 1, whereinthe inner surface of the first portion of the case includes a ribstructure having sections that extend outward from a central region ofthe rib structure.
 5. The SSD of claim 1, wherein a distance between afirst part of the thermal conductor and the inner surface of the firstportion of the case is different from a distance between a second partof the thermal conductor and the inner surface of the first portion ofthe case.
 6. The SSD of claim 1, wherein a thickness of a first part ofthe inner surface of the first portion of the case is different from athickness of a second part of the inner surface of the first portion ofthe case.
 7. The SSD of claim 1, wherein the thermal conductor isthermally coupled to the first portion of the case.
 8. The SSD of claim1, wherein the thermal conductor contacts the semiconductor module. 9.The SSD of claim 1, wherein the first portion of the case is made of ametal.
 10. The SSD of claim 1, wherein the thermal conductor isconfigured to transfer heat generated from the semiconductor module tothe first portion of the case.
 11. The SSD of claim 1, furthercomprising a first heat dissipation member disposed on the inner surfaceof the first portion of the case.
 12. The SSD of claim 11, furthercomprising a second heat dissipation member contacting the semiconductormodule.
 13. The SSD of claim 12, wherein the second heat dissipationmember is square-shaped.
 14. The SSD of claim 12, wherein the first heatdissipation member is rectangle-shaped including a notch and aperturesalong edges of the first heat dissipation member.
 15. The SSD of claim1, wherein the first portion of the case is configured to transfer heatgenerated from the semiconductor module.
 16. A solid state drive (SSD)comprising: a case including a first portion and a second portioncoupled to the first portion; a semiconductor module disposed within thecase; a thermal conductor disposed within the case, and disposed betweenthe semiconductor module and the first portion of the case; a first heatdissipation member disposed on an inner surface of the first portion ofthe case; a second heat dissipation member in contact with the thermalconductor, wherein an inner surface of the first portion of the case isuneven, and a thickness of a first part of the inner surface of thefirst portion of the case is different from a thickness of a second partof the inner surface of the first portion of the case.
 17. The SSD ofclaim 16, wherein the first heat dissipation member is rectangle-shapedincluding a notch and apertures along edges of the first heatdissipation member, and the second heat dissipation member issquare-shaped.
 18. The SSD of claim 16, wherein the second heatdissipation member contacts the semiconductor module.
 19. A solid statedrive (SSD) comprising: a case including a first portion and a secondportion coupled to the first portion; a semiconductor module disposedwithin the case; a thermal conductor disposed within the case, anddisposed between the semiconductor module and the first portion of thecase; a first heat dissipation member disposed on an inner surface ofthe first portion of the case; and a second heat dissipation member incontact with the semiconductor module and the thermal conductor, whereinan inner surface of the first portion of the case is uneven, a thicknessof a first part of the inner surface of the first portion of the case isdifferent from a thickness of a second part of the inner surface of thefirst portion of the case, the second heat dissipation member issquare-shaped, and the thermal conductor is thermally coupled to thefirst portion of the case.